The CY7C1480BV25-200BZXC is a high-performance, low-power Static Random Access Memory (SRAM) chip from Cypress Semiconductor. It is organized as 16-Mbits (2 Megabytes) by 8-bits, providing a total storage capacity of 2,097,152 bits. The SRAM features a fast access time of 25 nanoseconds (ns) and operates at a low voltage of 2.5 volts (V).
The CY7C1480BV25-200BZXC is suitable for a wide range of applications, including:
The CY7C1480BV25-200BZXC offers several benefits over traditional SRAM chips:
Parameter | Value |
---|---|
Organization | 16-Mbit (2 Megabyte) by 8-bit |
Access time | 25 ns |
Operating voltage | 2.5 V |
Power consumption | 200 mA (active) |
Package | 44-pin TSOP-II |
The CY7C1480BV25-200BZXC has a standard 44-pin TSOP-II package with the following pinout:
Pin | Name | Function |
---|---|---|
1 | VCC | Power supply |
2 | GND | Ground |
3 | A0 | Address input 0 |
4 | A1 | Address input 1 |
5 | A2 | Address input 2 |
6 | A3 | Address input 3 |
7 | A4 | Address input 4 |
8 | A5 | Address input 5 |
9 | A6 | Address input 6 |
10 | A7 | Address input 7 |
11 | A8 | Address input 8 |
12 | A9 | Address input 9 |
13 | A10 | Address input 10 |
14 | A11 | Address input 11 |
15 | DQ0 | Data input/output 0 |
16 | DQ1 | Data input/output 1 |
17 | DQ2 | Data input/output 2 |
18 | DQ3 | Data input/output 3 |
19 | DQ4 | Data input/output 4 |
20 | DQ5 | Data input/output 5 |
21 | DQ6 | Data input/output 6 |
22 | DQ7 | Data input/output 7 |
23 | WE# | Write enable |
24 | OE# | Output enable |
25 | CE# | Chip enable |
26 | NC | No connect |
27 | NC | No connect |
28 | NC | No connect |
29 | NC | No connect |
30 | NC | No connect |
31 | NC | No connect |
32 | NC | No connect |
33 | NC | No connect |
34 | NC | No connect |
35 | NC | No connect |
36 | NC | No connect |
37 | NC | No connect |
38 | NC | No connect |
39 | NC | No connect |
40 | NC | No connect |
41 | NC | No connect |
42 | NC | No connect |
43 | NC | No connect |
44 | NC | No connect |
The CY7C1480BV25-200BZXC is a simple and easy-to-use SRAM chip. To use the chip, simply connect the VCC pin to a 2.5 V power supply, the GND pin to ground, and the data input/output pins to the appropriate data bus. The address inputs can be connected to a decoder or other logic circuit to select the desired memory location.
The CY7C1480BV25-200BZXC has three chip enable inputs (CE#, WE#, and OE#) that control the chip's operation. CE# is the chip enable input. When CE# is low, the chip is enabled and can be read from or written to. When CE# is high, the chip is disabled and no read or write operations can be performed.
WE# is the write enable input. When WE# is low, the chip is in write mode and data can be written to the selected memory location. When WE# is high, the chip is in read mode and data can be read from the selected memory location.
OE# is the output enable input. When OE# is low, the chip's output buffers are enabled and data can be read from the selected memory location. When OE# is high, the chip's output buffers are disabled and no data can be read from the chip.
Here are a few tips and tricks for using the CY7C1480BV25-200BZXC:
Here are a few stories about how the CY7C1480BV25-200BZXC has been used in real-world applications:
Here are a few effective strategies for using the CY7C1480BV25-200BZXC:
Here are a few frequently asked questions about the CY7C1480BV25-200BZXC:
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